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COMPARISON OF INTERFACE-STATE BUILDUP IN MOS CAPACITORS SUBJECTED TO PENETRATING AND NONPENETRATING RADIATION.

Author
WINOKUR PS; SOKOLOSKI MM
HARRY DIAMOND LAB., ADELPHI, MD. 20783
Source
APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 10; PP. 627-630; BIBL. 22 REF.
Document type
Article
Language
English
Keyword (fr)
STRUCTURE COMPOSEE STRUCTURE MOS IRRADIATION RAYONNEMENT UV RAYONNEMENT GAMMA COBALT 60 CAPACITE MOS CARACTERISTIQUE CAPACITE TENSION DENSITE ETAT INTERFACE ETAT ELECTRONIQUE INTERFACE ELECTROMAGNETISME ELECTRONIQUE PHYSIQUE SOLIDE
Keyword (en)
ELECTROMAGNETISM ELECTRONICS SOLID PHYSICS
Keyword (es)
ELECTROMAGNETISMO ELECTRONICA FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7630286807

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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