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DATIERUNG VON HALBLEITERN MITTELS IONENIMPLANTATION.

Other title
DOPAGE DES SEMICONDUCTEURS PAR IMPLANTATION D'IONS (fr)
Author
MAERK M
BALZERS AG
Source
SPRECHSAAL KERAM. GLAS. BAUSTOFFE; DTSCH.; DA. 1975; VOL. 108; NO 13-14; PP. 384-386; BIBL. 2 REF.
Document type
Article
Language
German
Keyword (fr)
SEMICONDUCTEUR IMPLANTATION IMPURETE DOPAGE FABRICATION MICROELECTRONIQUE IMPLANTATION ION MATERIAU SEMICONDUCTEUR CRISTALLOGRAPHIE ELECTROMAGNETISME ELECTRONIQUE
Keyword (en)
CRISTALLOGRAPHY ELECTROMAGNETISM ELECTRONICS
Keyword (es)
CRISTALOGRAFIA ELECTROMAGNETISMO ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7640038415

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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