MEASUREMENT OF THE ELECTRICAL IMPURITY PROFILE OF IMPLANTED IONS, USING THE PULSED MOS C-V TECHNIQUE.
- Author
- VERJANS J; VAN OVERSTRAETEN RJ
LAB. FYS. ELEKTRON., KATHOL. UNIV. LEUVEN, 3030 HEVERLEE, BELG. - Source
- SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 11; PP. 911-916; BIBL. 11 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- IMPLANTATION IMPURETE DISTRIBUTION IMPURETE METHODE ETUDE PROFIL DOPAGE METHODE MESURE CARACTERISTIQUE CAPACITE TENSION STRUCTURE COMPOSEE STRUCTURE MOS IMPLANTATION ION FABRICATION MICROELECTRONIQUE ESSAI ESSAI NON DESTRUCTIF MESURE IMPULSIONNELLE APPLICATION MESURE CAPACITIVE CRISTALLOGRAPHIE ELECTROMAGNETISME ELECTRONIQUE
- Keyword (en)
- CRISTALLOGRAPHY ELECTROMAGNETISM ELECTRONICS
- Keyword (es)
- CRISTALOGRAFIA ELECTROMAGNETISMO ELECTRONICA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Electronics Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7640078211
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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