ELECTRICAL ACTIVATION PROCESSES OF P+ IONS CHANNELED ALONG THE (110) AXIS ON SILICON: EFFECT OF ANNEALING ON CARRIERS PROFILES SHAPE.
- Author
- CEMBALI F; GALLONI R; ZIGNANI F
LAB. CHIM. TECNOL. MATER. COMPONENTI ELETTRON., CNR, BOLOGNA, ITALY - Source
- RAD. EFFECTS; G.B.; DA. 1975; VOL. 26; NO 3; PP. 161-171; BIBL. 11 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- IRRADIATION ION IMPLANTATION IMPURETE SILICIUM CANALISATION PARTICULE RECUIT DEFAUT IRRADIATION DOSE ENERGIE ENERGIE ACTIVATION ANALYSE DIFFUSION RUTHERFORD DOPAGE P RETRODIFFUSION HYDROGENE ION ATOMIQUE CONCENTRATION PORTEUR CHARGE IMPURETE PHOSPHORE CRISTALLOGRAPHIE PHYSIQUE SOLIDE
- Keyword (en)
- CRISTALLOGRAPHY SOLID PHYSICS
- Keyword (es)
- CRISTALOGRAFIA FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7640104490
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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