PRECISE TEMPERATURE CONTROL FOR GROWTH OF SILICON CRYSTALS.
- Author
- LEE SP; LUE JT; YANG YT; YU HY
DEP. PHYS., NATL. TSING HUA UNIV., HSINCHU, TAIWAN, REPUB. CHINA - Source
- REV. SCI. INSTRUM.; U.S.A.; DA. 1976; VOL. 47; NO 1; PP. 72-73; BIBL. 4 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- SILICIUM CROISSANCE CRISTALLINE MONOCRISTAL METHODE PHASE FONDUE TEMPERATURE CONTROLE PROCESSUS AUTOMATISATION CRISTALLOGRAPHIE
- Keyword (en)
- CRISTALLOGRAPHY
- Keyword (es)
- CRISTALOGRAFIA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7640194106
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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