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DRAIN CONDUCTANCE OF JUNCTION GATE FET'S IN THE HOT ELECTRON RANGE.

Author
YAMAGUCHI K; KODERA H
HITACHI LTD., HIGASHI-KOIGAKUBO-1-280, KOKUBUNJI-SHI, TOKYO 185, JAP.
Source
I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 6; PP. 545-553; BIBL. 13 REF.
Document type
Article
Language
English
Keyword (fr)
TRANSISTOR EFFET CHAMP TRANSISTOR EFFET CHAMP JONCTION CONDUCTANCE ELECTRIQUE DRAIN SIMULATION ANALYSE NUMERIQUE ANALYSE BIDIMENSIONNELLE ELECTROMAGNETISME ELECTRONIQUE
Keyword (en)
FIELD EFFECT TRANSISTOR JUNCTION FIELD EFFECT TRANSISTOR ELECTRICAL CONDUCTANCE DRAIN SIMULATION NUMERICAL ANALYSIS TWO DIMENSIONAL ANALYSIS ELECTROMAGNETISM ELECTRONICS
Keyword (es)
ELECTROMAGNETISMO ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7730005831

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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