OHMIC CONTACTS TO P-TYPE GAAS.
- Author
- ISHIHARA O; NISHITANI K; SAWANO H; MITSUI S
MITSUBISHI ELECTRIC CORP., ITAMI, HYOGO - Source
- JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 7; PP. 1411-1412; BIBL. 9 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- CONTACT ELECTRIQUE CONTACT OHMIQUE ARSENIURE COMPOSE GALLIUM CONDUCTIVITE TYPE P FABRICATION ARSENIURE GALLIUM ELECTROMAGNETISME ELECTRONIQUE
- Keyword (en)
- ELECTRIC CONTACT OHMIC CONTACT ARSENIDES P TYPE CONDUCTIVITY ELECTROMAGNETISM ELECTRONICS
- Keyword (es)
- ELECTROMAGNETISMO ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7730050303
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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Istex access
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