EFFECT OF COMPOSITION AND PRESSURE ON THE NITROGEN ISOELECTRONIC TRAP IN GAAS1-XPX.
- Author
- NELSON RJ; HOLONYAK N JR; COLEMAN JJ; LAZARUS D; GROVES WO; KEUNE DL; CRAFORD MG; WOLFORD DJ; STREETMAN BG
MATER. RES. LAB., UNIV. ILLINOIS, URBANA, ILL. 61801 - Source
- PHYS. REV., B; U.S.A.; DA. 1976; VOL. 14; NO 2; PP. 685-690; BIBL. 31 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- ABSORPTION OPTIQUE PHOTOLUMINESCENCE DOPAGE IMPURETE COMPOSITION CHIMIQUE PRESSION PHOSPHOARSENIURE GALLIUM IMPURETE AZOTE PHYSIQUE SOLIDE
- Keyword (en)
- OPTICAL ABSORPTION PHOTOLUMINESCENCE DOPING IMPURITIES CHEMICAL COMPOSITION PRESSURE SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7730070234
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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