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FORMATION OF SILICON NITRIDE AT A SI-SIO2 INTERFACE DURING LOCAL OXIDATION OF SILICON AND DURING HEAT-TREATMENT OF OXIDIZED SILICON IN NH3 GAS.

Author
KOOI E; VAN LIEROP JG; APPELS JA
PHILIPS RES. LAB., EINDHOVEN, NETH.
Source
J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 7; PP. 1117-1120; BIBL. 5 REF.
Document type
Article
Language
English
Keyword (fr)
CONTACT ELECTRIQUE CONTACT OXYDE SEMICONDUCTEUR NITRURE COMPOSE SILICIUM OXYDATION SILICIUM TRAITEMENT THERMIQUE FABRICATION MICROELECTRONIQUE TECHNOLOGIE TECHNOLOGIE LOCOS FORMATION AMMONIAC NITRURE SILICIUM ELECTROMAGNETISME ELECTRONIQUE
Keyword (en)
ELECTRIC CONTACT SEMICONDUCTOR OXIDE CONTACT NITRIDES OXIDATION SILICON HEAT TREATMENT MICROELECTRONIC FABRICATION TECHNOLOGY AMMONIA ELECTROMAGNETISM ELECTRONICS
Keyword (es)
ELECTROMAGNETISMO ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7730097846

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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