SYSTEMATIC VARIATION OF THE MEAN POSITRON LIFETIME AND GAUSSIAN FRACTION IN ANNEALED METALS AND SEMICONDUCTORS.
- Author
- WELCH DO; LYNN KG
BROOKHAVEN NATL. LAB., UPTON, N.Y. 11973, U.S.A. - Source
- PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 77; NO 1; PP. 277-286; ABS. FR.; BIBL. 25 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- ANNIHILATION POSITON DUREE VIE MODELE MATHEMATIQUE METAL SEMICONDUCTEUR PHYSIQUE SOLIDE
- Keyword (en)
- POSITRON ANNIHILATION LIFETIME MATHEMATICAL MODELS METAL SEMICONDUCTOR MATERIALS SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7730138359
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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