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COMPARISON OF EXPERIMENTAL AND THEORETICAL CARRIER CONCENTRATIONS IN HEAVILY DOPED N-TYPE SILICON.

Author
FINETTI M; MAZZONE AM; PASSARI L; PIETRA S; SUSI E
CNR-LAMEL, I-40126 BOLOGNA, ITALY
Source
J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 10; PP. 4590-4592; BIBL. 20 REF.
Document type
Article
Language
English
Keyword (fr)
PORTEUR CHARGE CONCENTRATION PORTEUR CHARGE DOPAGE ELECTRON CONDUCTION EFFET HALL CONDUCTIVITE ELECTRIQUE SILICIUM PHYSIQUE SOLIDE
Keyword (en)
CHARGE CARRIER CHARGE CARRIER CONCENTRATION DOPING CONDUCTION ELECTRON HALL EFFECT ELECTRICAL CONDUCTIVITY SILICON SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7730152250

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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