A NEW HETEROJUNCTION-GATE GAAS FET.
- Author
- UMEBACHI S; ASAHI K; NAGASHIMA A; INOUE M; KANO G
MATSUSHITA ELECTRONICS CORP., TAKATSUKI, OSAKA, JAP. - Source
- JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; SUPPL. 1; PP. 157-161; BIBL. 4 REF.; (CONF. SOLID STATE DEVICES. 7. PROC.; TOKYO; 1975)
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- TRANSISTOR EFFET CHAMP ARSENIURE COMPOSE GALLIUM GRILLE HETEROJONCTION FABRICATION ARSENIURE GALLIUM ELECTROMAGNETISME ELECTRONIQUE
- Keyword (en)
- FIELD EFFECT TRANSISTOR ARSENIDES HETEROJUNCTION ELECTROMAGNETISM ELECTRONICS
- Keyword (es)
- ELECTROMAGNETISMO ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7730158031
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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