CARACTERISATION ELECTRIQUE DE JONCTIONS P-N GAAL SB/GASB.
- Author
- BRESSE JF; NGUYEN VAN MAU A; MUOY Y; BOUGNOT G
UNIV. SCI. TECH. LANGUEDOC, CENT. ETUD. ELECTRON. SOLIDES, 34060 MONTPELLIER CEDEX, FR. - Source
- VIDE; FR.; DA. 1976; NO 183 SUPPL.; PP. 113-118; ABS. ANGL.; BIBL. 6 REF.; (MATER. TECHNOL. MICROELECTR. TENDANCES ACTUELLES. COLLOQ. C.R.; MONTPELLIER; 1976)
- Document type
- Conference Paper
- Language
- French
- Keyword (fr)
- JONCTION JONCTION P N PROPRIETE ELECTRIQUE ANTIMONIURE COMPOSE ALUMINIUM COMPOSE GALLIUM FABRICATION DEPOT PHASE LIQUIDE COUCHE EPITAXIQUE PREPARATION ANTIMONIURE GALLIUM ANTIMONIURE ALUMINIUM GALLIUM ELECTROMAGNETISME ELECTRONIQUE
- Keyword (en)
- JUNCTION P N JUNCTION ELECTRICAL PROPERTIES ANTIMONIDES LIQUID PHASE EPITAXIAL FILM PREPARATION ELECTROMAGNETISM ELECTRONICS
- Keyword (es)
- ELECTROMAGNETISMO ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7730198620
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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