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CARACTERISATION ELECTRIQUE DE JONCTIONS P-N GAAL SB/GASB.

Author
BRESSE JF; NGUYEN VAN MAU A; MUOY Y; BOUGNOT G
UNIV. SCI. TECH. LANGUEDOC, CENT. ETUD. ELECTRON. SOLIDES, 34060 MONTPELLIER CEDEX, FR.
Source
VIDE; FR.; DA. 1976; NO 183 SUPPL.; PP. 113-118; ABS. ANGL.; BIBL. 6 REF.; (MATER. TECHNOL. MICROELECTR. TENDANCES ACTUELLES. COLLOQ. C.R.; MONTPELLIER; 1976)
Document type
Conference Paper
Language
French
Keyword (fr)
JONCTION JONCTION P N PROPRIETE ELECTRIQUE ANTIMONIURE COMPOSE ALUMINIUM COMPOSE GALLIUM FABRICATION DEPOT PHASE LIQUIDE COUCHE EPITAXIQUE PREPARATION ANTIMONIURE GALLIUM ANTIMONIURE ALUMINIUM GALLIUM ELECTROMAGNETISME ELECTRONIQUE
Keyword (en)
JUNCTION P N JUNCTION ELECTRICAL PROPERTIES ANTIMONIDES LIQUID PHASE EPITAXIAL FILM PREPARATION ELECTROMAGNETISM ELECTRONICS
Keyword (es)
ELECTROMAGNETISMO ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7730198620

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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