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ELECTRICAL PROPERTIES OF BE-IMPLANTED GAAS1-XPX.

Author
CHATTERJEE PK; MCLEVIGE WV; STREETMAN BG
DEP. ELECTR. ENG., UNIV. ILLINOIS URBANA CHAMPAIGN, URBANA, IL 61801, U.S.A.
Source
SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 11; PP. 961-964; BIBL. 21 REF.
Document type
Article
Language
English
Keyword (fr)
CONDUCTIVITE ELECTRIQUE EFFET HALL IMPLANTATION IMPURETE RECUIT MOBILITE PORTEUR CHARGE TROU COMPOSITION CHIMIQUE PHOSPHOARSENIURE GALLIUM PHYSIQUE SOLIDE
Keyword (en)
ELECTRICAL CONDUCTIVITY HALL EFFECT ANNEALING CHARGE CARRIER MOBILITY HOLE CHEMICAL COMPOSITION SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7730227819

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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