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EFFECT OF A TRANSITION LAYER AT A SI-SIO2 INTERFACE ON ELECTRON MOBILITY AND ENERGY LEVELS.

Author
STERN F
IBM, THOMAS J. WATSON RES. CENT., YORKTOWN-HEIGHTS, N.Y. 10598, U.S.A.
Source
SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 21; NO 2; PP. 163-166; BIBL. 23 REF.
Document type
Article
Language
English
Keyword (fr)
CONTACT ELECTRIQUE CONTACT OXYDE SEMICONDUCTEUR MOBILITE PORTEUR CHARGE ELECTRON NIVEAU ENERGIE COUCHE MINCE COUCHE TRANSITION ELECTROMAGNETISME ELECTRONIQUE
Keyword (en)
ELECTRIC CONTACT SEMICONDUCTOR OXIDE CONTACT CHARGE CARRIER MOBILITY ELECTRONS ENERGY LEVEL THIN FILM TRANSITION LAYER ELECTROMAGNETISM ELECTRONICS
Keyword (es)
ELECTROMAGNETISMO ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7730289853

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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