EFFECT OF A TRANSITION LAYER AT A SI-SIO2 INTERFACE ON ELECTRON MOBILITY AND ENERGY LEVELS.
- Author
- STERN F
IBM, THOMAS J. WATSON RES. CENT., YORKTOWN-HEIGHTS, N.Y. 10598, U.S.A. - Source
- SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 21; NO 2; PP. 163-166; BIBL. 23 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- CONTACT ELECTRIQUE CONTACT OXYDE SEMICONDUCTEUR MOBILITE PORTEUR CHARGE ELECTRON NIVEAU ENERGIE COUCHE MINCE COUCHE TRANSITION ELECTROMAGNETISME ELECTRONIQUE
- Keyword (en)
- ELECTRIC CONTACT SEMICONDUCTOR OXIDE CONTACT CHARGE CARRIER MOBILITY ELECTRONS ENERGY LEVEL THIN FILM TRANSITION LAYER ELECTROMAGNETISM ELECTRONICS
- Keyword (es)
- ELECTROMAGNETISMO ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7730289853
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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