INFLUENCE DE LA DERIVE TRANSVERSALE DES PORTEURS SUR L'INTERACTION ACOUSTOELECTRONIQUE DANS UNE STRUCTURE FEUILLETEE PIEZOELECTRIQUE-SEMICONDUCTEUR
- Author
- GULYAEV YU V; GRIGOR'EVSKIJ VI; KMITA AM; MEVDEV AV; FEDORETS VN
INST. RADIOTEKH. EHLEKTRON., AN SSSR, MOSKVA - Source
- FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 1; PP. 22-28; BIBL. 12 REF.
- Document type
- Article
- Language
- Russian
- Keyword (fr)
- EFFET ACOUSTOELECTRIQUE ONDE ACOUSTIQUE CONTACT ELECTRIQUE CONTACT PIEZOELECTRIQUE SEMICONDUCTEUR DIFFUSION PORTEUR CHARGE PORTEUR CHARGE PHYSIQUE SOLIDE
- Keyword (en)
- ACOUSTOELECTRIC EFFECT ACOUSTICAL WAVES ELECTRIC CONTACT PIEZOELECTRIC SEMICONDUCTOR CONTACT CHARGE CARRIER SCATTERING CHARGE CARRIER SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7730308734
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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Europe PubMed Central access
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