THE EFFECT OF THE MATERIAL VELOCITY-FIELD CHARACTERISTIC ON THE SMALL-SIGNAL MICROWAVE IMPEDANCE OF PUNCHTHROUGH DEVICES.
- Author
- SITCH J; ROBSON PN; ENGLEFIELD CG; MAJERFELD A; HASEGAWA F
DEP. ELECTR. ELECTRON. ENG., UNIV. NOTTINGHAM, U.K. - Source
- I.E.E.E. TRANS ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 10; PP. 1170-1176; BIBL. 26 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- DISPOSITIF ETAT SOLIDE DISPOSITIF EFFET PERCAGE IMPEDANCE ELECTRIQUE HYPERFREQUENCE REGIME SIGNAL FAIBLE CARACTERISTIQUE VITESSE CHAMP ELECTRIQUE DIODE BARITT DISPOSITIF TEMPS TRANSIT ANALYSE FONCTIONNEMENT ELECTROMAGNETISME ELECTRONIQUE
- Keyword (en)
- SOLID STATE DEVICE ELECTRICAL IMPEDANCE MICROWAVE SMALL SIGNAL BEHAVIOR BARITT DIODE TRANSIT TIME DEVICE OPERATION STUDY ELECTROMAGNETISM ELECTRONICS
- Keyword (es)
- ELECTROMAGNETISMO ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7730317082
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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