INTERFACE STATES INDUCED BY AMORPHOUS SIO2 IN MOS STRUCTURES.
- Author
- OSAKA Y
DEP. ELECTR. ENG., FAC. ENG., HIROSHIMA UNIV., HIROSHIMA - Source
- J. PHYS. SOC. JAP.; JAP.; DA. 1977; VOL. 42; NO 2; PP. 533-541; BIBL. 23 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- STRUCTURE MOS INTERFACE ETAT AMORPHE STRUCTURE COMPOSEE ETAT ELECTRONIQUE INTERFACE PHYSIQUE SOLIDE
- Keyword (en)
- MOS STRUCTURE INTERFACES AMORPHOUS STATE COMPOUNDED STRUCTURE INTERFACE ELECTRON STATE SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7730421682
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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