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A MODEL FOR THE FORMATION OF STACKING FAULTS IN SILICON.

Author
MAHAJAN S; ROZGONYI GA; BRASEN D
BELL LAB., MURRAY HILL, N.J. 07974
Source
APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 2; PP. 73-75; BIBL. 25 REF.
Document type
Article
Language
English
Keyword (fr)
SILICIUM DEFAUT EMPILEMENT IMPURETE MODELE DISLOCATION AMAS DEFAUT PONCTUEL ABRASION OXYDATION VIEILLISSEMENT ANALYSE ME METALLOIDE DOPAGE O CRISTALLOGRAPHIE
Keyword (en)
SILICON STACKING FAULT IMPURITIES MODELS DISLOCATION POINT DEFECT CLUSTER ABRASION OXIDATION AGEING CRISTALLOGRAPHY
Keyword (es)
CRISTALOGRAFIA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7740200724

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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