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LONG-LIFETIME PHOTOCONDUCTIVITY EFFECT IN N-TYPE GAALAS.

Author
NELSON RJ
BELL LABORATORIES, MURRAY HILL, N.J. 07974
Source
APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 5; PP. 351-353; BIBL. 25 REF.
Document type
Article
Language
English
Keyword (fr)
PHOTOCONDUCTIVITE EFFET HALL DUREE VIE IMPURETE COMPOSITION CHIMIQUE PORTEUR CHARGE ELECTRON MOBILITE PORTEUR CHARGE BASSE TEMPERATURE TEMPERATURE ARSENIURE ALUMINIUM GALLIUM IMPURETE TELLURE PHYSIQUE SOLIDE
Keyword (en)
PHOTOCONDUCTIVITY HALL EFFECT LIFETIME IMPURITIES CHEMICAL COMPOSITION CHARGE CARRIER ELECTRONS CHARGE CARRIER MOBILITY LOW TEMPERATURE TEMPERATURE SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7830014367

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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