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CONTACT-DEGRADATION STUDIES ON GAAS TRANSFERRED-ELECTRON DEVICES USING A FOCUSED BACKSCATTERING TECHNIQUE.

Author
PALMSTROM CJ; MORGAN DV; HOWES MJ
DEP. ELECTR. ELECTRON. ENG., UNIV. LEEDS, LEEDS LS2 9JT, ENGL.
Source
ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 17; PP. 504-505; BIBL. 9 REF.
Document type
Article
Language
English
Keyword (fr)
DISPOSITIF TRANSFERT ELECTRON ARSENIURE COMPOSE GALLIUM RETRODIFFUSION CONTACT ELECTRIQUE DETERIORATION MATERIAU ARSENIURE GALLIUM METHODE ETUDE ELECTRONIQUE
Keyword (en)
TRANSFERRED ELECTRON DEVICE ARSENIDES BACKSCATTERING ELECTRIC CONTACT DETERIORATION MATERIALS INVESTIGATION METHOD ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7830043004

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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