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CIRCUIT-IMPLICATIONS OF THE METAL-GATE POLYSILICON SOURCE- AND -DRAIN MOST PROCESS.

Author
SPAANENBURG L
TWENTE UNIV. TECHNOL., ENSCHEDE, NETH.
Source
I.E.E.E. J. SOLID. STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 3; PP. 258-263; BIBL. 12 REF.
Document type
Article
Language
English
Keyword (fr)
TECHNOLOGIE MOS POLYCRISTAL FABRICATION MICROELECTRONIQUE TECHNOLOGIE GRILLE METAL CIRCUIT INTEGRE CIRCUIT MOS TECHNOLOGIE MOS PSD ELECTRONIQUE
Keyword (en)
MOS TECHNOLOGY POLYCRYSTAL MICROELECTRONIC FABRICATION TECHNOLOGY METAL INTEGRATED CIRCUIT MOS CIRCUIT ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7830043031

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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