DRIFT OF THE BREAKDOWN VOLTAGE IN P-N JUNCTIONS IN SILICON (WALK-OUT).
- Author
- VERWEY JF; HERINGA A; DE WERDT R; HOFSTAD WVD
PHILIPS RES. LAB., EINDHOVEN, NETH. - Source
- SOLID-STATE ELECTRON; G.B.; DA. 1977; VOL. 20; NO 8; PP. 689-695; BIBL. 13 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- TENSION DISRUPTIVE JONCTION JONCTION P N DERIVE TENSION TEMPS ELECTRONIQUE
- Keyword (en)
- BREAKDOWN VOLTAGE JUNCTION P N JUNCTION VOLTAGE DRIFT TIME ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7830051727
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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