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DRIFT OF THE BREAKDOWN VOLTAGE IN P-N JUNCTIONS IN SILICON (WALK-OUT).

Author
VERWEY JF; HERINGA A; DE WERDT R; HOFSTAD WVD
PHILIPS RES. LAB., EINDHOVEN, NETH.
Source
SOLID-STATE ELECTRON; G.B.; DA. 1977; VOL. 20; NO 8; PP. 689-695; BIBL. 13 REF.
Document type
Article
Language
English
Keyword (fr)
TENSION DISRUPTIVE JONCTION JONCTION P N DERIVE TENSION TEMPS ELECTRONIQUE
Keyword (en)
BREAKDOWN VOLTAGE JUNCTION P N JUNCTION VOLTAGE DRIFT TIME ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7830051727

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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