THE INFLUENCE OF THE AMPLITUDE OF SIGNAL CHARGE AND OF THE DOPING LEVEL ON THE DISTRIBUTION OF CARRIERS IN A SURFACE CCD.
- Author
- IONESCU M
DEP. ELECTRON., POLYTECH. INST. BUCHAREST - Source
- REV. ROUMAINE PHYS.; ROUMAN.; DA. 1977; VOL. 22; NO 4; PP. 387-392; ABS. FR.; BIBL. 7 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- DISPOSITIF TRANSFERT CHARGE DISPOSITIF COUPLE CHARGE SURFACE DISTRIBUTION CHARGE DOPAGE AMPLITUDE ANALYSE FONCTIONNEMENT ELECTRONIQUE
- Keyword (en)
- CHARGE TRANSFER DEVICE CHARGE COUPLED DEVICE SURFACE LOAD DISTRIBUTION DOPING AMPLITUDE OPERATION STUDY ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7830103515
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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