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A REVIEW OF THE TECHNIQUES USED TO DETERMINE TRAP PARAMETERS IN THE MNOS STRUCTURE.

Author
MAR HA; SIMMONS JG
DEP. ELECTR. ENG., UNIV. TORONTO, TORONTO, ONT., CAN.
Source
I.E.E.E. TRANS-ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 5; PP. 541-546; BIBL. 14 REF.
Document type
Article
Language
English
Keyword (fr)
STRUCTURE COMPOSEE STRUCTURE MNOS PIEGEAGE PORTEUR CHARGE PORTEUR CHARGE RELAXATION DIELECTRIQUE ELECTRONIQUE
Keyword (en)
COMPOUNDED STRUCTURE MNOS STRUCTURE CHARGE CARRIER TRAPPING CHARGE CARRIER DIELECTRIC RELAXATION ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7830103533

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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