Pascal and Francis Bibliographic Databases

Help

Export

Selection :

Permanent link
http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=PASCAL7830123919

THE PHYSICS OF EXCESS ELECTRON VELOCITY IN SUBMICRON-CHANNEL FET'S.

Author
HUANG RS; LADBROOKE PH
DEP. SOLID-STATE ELECTRON., UNIV. NEW SOUTH WALES, KENSINGTON, SYDNEY, AUST. 2033
Source
J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 11; PP. 4791-4798; BIBL. 14 REF.
Document type
Article
Language
English
Keyword (fr)
TRANSISTOR EFFET CHAMP PORTEUR CHARGE ELECTRON VITESSE GERMANIUM SILICIUM ARSENIURE COMPOSE GALLIUM PORTEUR EXCES ARSENIURE GALLIUM ELECTRONIQUE
Keyword (en)
FIELD EFFECT TRANSISTOR CHARGE CARRIER ELECTRONS VELOCITY GERMANIUM SILICON ARSENIDES ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7830123919

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

Searching the Web