Pascal and Francis Bibliographic Databases

Help

Permanent link : http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=PASCAL7830130806

Export

Selection :

A DEGRADATION MECHANISM FOR OHMIC CONTACTS IN GAAS DEVICES.

Author
CHINO K; WADA Y
MUSASHINO ELECTR. COMMUN. LAB. NTT, MUSASHINO-SHI, TOKYO 180
Source
JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; NO 10; PP. 1823-1828; BIBL. 10 REF.
Document type
Article
Language
English
Keyword (fr)
CONTACT ELECTRIQUE CONTACT OHMIQUE DETERIORATION ARSENIURE COMPOSE GALLIUM ESSAI ESSAI LONGUE DUREE ARSENIURE GALLIUM ELECTRONIQUE
Keyword (en)
ELECTRIC CONTACT OHMIC CONTACT DETERIORATION ARSENIDES TEST LONG TERM TEST ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7830130806

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

Searching the Web