OHMIC CONTACTS ON HIGH PURITY P-TYPE SILICON.
- Author
- DOBBS BC; HEMENGER PM; SMITH SR
UNIV. DAYTON RES. INST., DAYTON, OHIO 45469 - Source
- J. ELECTRON. MATER.; U.S.A.; DA. 1977; VOL. 6; NO 6; PP. 705-716; BIBL. 2 P.
- Document type
- Article
- Language
- English
- Keyword (fr)
- CONTACT ELECTRIQUE CONTACT OHMIQUE SILICIUM CONDUCTIVITE TYPE P FABRICATION METALLISATION CONNEXION ELECTRIQUE APPLICATION CELLULE SOLAIRE ELECTRONIQUE
- Keyword (en)
- ELECTRIC CONTACT OHMIC CONTACT SILICON P TYPE CONDUCTIVITY METALLIZING ELECTRICAL CONNECTION APPLICATION SOLAR CELL ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7830188519
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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