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OHMIC CONTACTS ON HIGH PURITY P-TYPE SILICON.

Author
DOBBS BC; HEMENGER PM; SMITH SR
UNIV. DAYTON RES. INST., DAYTON, OHIO 45469
Source
J. ELECTRON. MATER.; U.S.A.; DA. 1977; VOL. 6; NO 6; PP. 705-716; BIBL. 2 P.
Document type
Article
Language
English
Keyword (fr)
CONTACT ELECTRIQUE CONTACT OHMIQUE SILICIUM CONDUCTIVITE TYPE P FABRICATION METALLISATION CONNEXION ELECTRIQUE APPLICATION CELLULE SOLAIRE ELECTRONIQUE
Keyword (en)
ELECTRIC CONTACT OHMIC CONTACT SILICON P TYPE CONDUCTIVITY METALLIZING ELECTRICAL CONNECTION APPLICATION SOLAR CELL ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7830188519

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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