THE PHOTOEFFECT IN SILICON PLANAR POSITIONAL PHOTON-DETECTORS WITH A HIGH RESISTIVITY DOPED CHANNEL.
- Author
- VASSILEV VS; VELCHEV NB
FAC. PHYS., UNIV. SOFIA, SOFIA 1126, BULG. - Source
- SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 12; PP. 999-1001; BIBL. 8 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- DETECTEUR RAYONNEMENT MODELE 1 DIMENSION DISPOSITIF PHOTOELECTRIQUE GENERATION PORTEUR CHARGE PROPRIETE PHOTOELECTRONIQUE SILICIUM EFFET ELECTRONIQUE
- Keyword (en)
- RADIATION DETECTOR ONE-DIMENSIONAL MODELS PHOTOELECTRIC CELL CHARGE CARRIER GENERATION PHOTOELECTRONIC PROPERTIES SILICON ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7830198748
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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