PRECIPITATION-INDUCED CURRENTS AND GENERATION-RECOMBINATION CURRENTS IN INTENTIONALLY CONTAMINATED SILICON P+N JUNCTIONS.
- Author
- BUSTA HH; WAGGENER HA
TELETYPE CORP., SKOKIE, ILL. 60076 - Source
- J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 9; PP. 1424-1429; BIBL. 15 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- JONCTION JONCTION P+ N SILICIUM DOPAGE CONDUCTIVITE ELECTRIQUE GENERATION PORTEUR CHARGE RECOMBINAISON PORTEUR CHARGE CARACTERISTIQUE COURANT TENSION NIVEAU IMPURETE PRECIPITATION DOPAGE OR DOPAGE FER DOPAGE CUIVRE DOPAGE TANTALE DOPAGE NICKEL DOPAGE METAL TRANSITION PHYSIQUE SOLIDE
- Keyword (en)
- JUNCTION P+ N JUNCTION SILICON DOPING ELECTRICAL CONDUCTIVITY CHARGE CARRIER GENERATION CHARGE CARRIER RECOMBINATION VOLTAGE CURRENT CURVE IMPURITY LEVEL PRECIPITATION SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7830239719
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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