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PRECIPITATION-INDUCED CURRENTS AND GENERATION-RECOMBINATION CURRENTS IN INTENTIONALLY CONTAMINATED SILICON P+N JUNCTIONS.

Author
BUSTA HH; WAGGENER HA
TELETYPE CORP., SKOKIE, ILL. 60076
Source
J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 9; PP. 1424-1429; BIBL. 15 REF.
Document type
Article
Language
English
Keyword (fr)
JONCTION JONCTION P+ N SILICIUM DOPAGE CONDUCTIVITE ELECTRIQUE GENERATION PORTEUR CHARGE RECOMBINAISON PORTEUR CHARGE CARACTERISTIQUE COURANT TENSION NIVEAU IMPURETE PRECIPITATION DOPAGE OR DOPAGE FER DOPAGE CUIVRE DOPAGE TANTALE DOPAGE NICKEL DOPAGE METAL TRANSITION PHYSIQUE SOLIDE
Keyword (en)
JUNCTION P+ N JUNCTION SILICON DOPING ELECTRICAL CONDUCTIVITY CHARGE CARRIER GENERATION CHARGE CARRIER RECOMBINATION VOLTAGE CURRENT CURVE IMPURITY LEVEL PRECIPITATION SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7830239719

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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