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ROOM-TEMPERATURE CONDUCTIVITY AND LOCATION OF MOBILE SODIUM IONS IN THE THERMAL SILICON DIOXIDE LAYER OF A METAL-SILICON DIOXIDE-SILICON STRUCTURE.

Author
DIMARIA DJ
IBM THOMAS J. WATSON RES. CENT., YORKTOWN HEIGHTS, N.Y. 10598
Source
J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 12; PP. 5149-5151; BIBL. 14 REF.
Document type
Article
Language
English
Keyword (fr)
STRUCTURE COMPOSEE STRUCTURE MOS CONDUCTIVITE ELECTRIQUE TEMPERATURE AMBIANTE ION SODIUM DIELECTRIQUE LOCALISATION ELECTRONIQUE
Keyword (en)
COMPOUNDED STRUCTURE MOS STRUCTURE ELECTRICAL CONDUCTIVITY ROOM TEMPERATURE IONS SODIUM DIELECTRIC MATERIALS LOCALIZATION ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7830347810

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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