INTERFACIAL RECOMBINATION VELOCITY IN GAAIASGAAS HETEROSTRUCTURES.
- Author
- NELSON RJ; SOBERS RG
BELL. LAB., MURRAY HILL, N.J. 07974 - Source
- APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 11; PP. 761-763; BIBL. 17 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- HETEROJONCTION RECOMBINAISON PORTEUR CHARGE PORTEUR CHARGE PHOTOLUMINESCENCE RECOMBINAISON RADIATIVE ARSENIURE GALLIUM ARSENIURE ALUMINIUM GALLIUM EFFET ELECTRONIQUE
- Keyword (en)
- HETEROJUNCTION CHARGE CARRIER RECOMBINATION CHARGE CARRIER PHOTOLUMINESCENCE RADIATIVE RECOMBINATION ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7830365706
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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