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COMPLEX PERMITTIVITY OF GAAS AND CDTE AT MICROWAVE FREQUENCIES.

Author
COURTNEY WE
M.I.T. LINCOLN LAB., LEXINGTON, MASS. 02173
Source
I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1977; VOL. 25; NO 8; PP. 697-701; BIBL. 24 REF.
Document type
Article
Language
English
Keyword (fr)
CONSTANTE DIELECTRIQUE HYPERFREQUENCE MATERIAU SEMICONDUCTEUR DOPAGE MESURE CIRCUIT INTEGRE CIRCUIT HYPERFREQUENCE PROPRIETE MATERIAU ARSENIURE GALLIUM TELLURURE CADMIUM IMPURETE CHROME ELECTRONIQUE
Keyword (en)
DIELECTRIC CONSTANT MICROWAVE DOPING MEASUREMENT INTEGRATED CIRCUIT MICROWAVE CIRCUIT PROPERTIES OF MATERIALS ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7830385891

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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