EXCHANGE AND CORRELATION POTENTIAL IN SILICON. II.
- Author
- INKSON JC; BENNETT M
CAVENDISH LAB., MADINGLEY ROAD, CAMBRIDGE CB3 OHE, U.K. - Source
- J. PHYS. C; G.B.; DA. 1978; VOL. 11; NO 10; PP. 2017-2027; BIBL. 19 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- STRUCTURE BANDE CORRELATION METHODE CALCUL POTENTIEL ECHANGE BANDE CONDUCTION SILICIUM PHYSIQUE SOLIDE
- Keyword (en)
- BAND STRUCTURE CORRELATION CALCULATING METHOD EXCHANGE POTENTIAL CONDUCTION BAND SILICON SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7830428768
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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