EDGE LUMINESCENCE SPECTRA OF ACCEPTORS IN SI: IMPLICATIONS FOR MULTIEXCITON COMPLEXES.
- Author
- LYON SA; SMITH DL; MCGILL TC
CALIFORNIA INST. TECHNOL., PASADENA, CALIF. 91125 - Source
- PHYS. REV., B; U.S.A.; DA. 1978; VOL. 17; NO 6; PP. 2620-2624; BIBL. 19 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- PHOTOLUMINESCENCE LASER DOPAGE CENTRE ACCEPTEUR PROCESSUS EXCITONIQUE EXCITON LIE BASSE TEMPERATURE SILICIUM IMPURETE ALUMINIUM IMPURETE GALLIUM IMPURETE INDIUM PHYSIQUE SOLIDE
- Keyword (en)
- PHOTOLUMINESCENCE LASER DOPING ACCEPTOR CENTER EXCITONIC PROCESS BOUND EXCITON LOW TEMPERATURE SILICON SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7830450932
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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