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THE POSSIBILITY OF BUILDING AND ELECTRO-ACOUSTIC AMPLIFIER EMPLOYING A GAAS N-N+ EPITAXIAL STRUCTURE

Author
GULYALYEV YU V; IVANOV SN; KOTELYANSKIY IM; MANSFEL'D GD
Source
RADIO ENGNG ELECTRON. PHYS.; U.S.A.; DA. 1977; VOL. 22; NO 4; PP. 105-108; BIBL. 11 REF.; TRAD. DU RUSSE
Document type
Article
Language
English
Keyword (fr)
AMPLIFICATEUR ETAT SOLIDE AMPLIFICATEUR ACOUSTOELECTRIQUE COUCHE EPITAXIQUE ARSENIURE COMPOSE GALLIUM TRANSFERT CHALEUR AMPLIFICATEUR ONDE ACOUSTIQUE ONDE ACOUSTIQUE ULTRASON AMPLIFICATION HYPERFREQUENCE ARSENIURE GALLIUM ELECTRONIQUE
Keyword (en)
SOLID STATE AMPLIFIER ACOUSTOELECTRIC AMPLIFIER EPITAXIAL FILM ARSENIDES HEAT TRANSFER ACOUSTIC WAVE AMPLIFIER ACOUSTICAL WAVES ULTRASOUND AMPLIFICATION MICROWAVE ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7830460508

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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