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A DOUBLE-LAYERED ENCAPSULANT FOR ANNEALING ION-IMPLANTED GAAS UP TO 1100OC.

Author
LIDOW A; GIBBONS JF; MAGEE T
STANFORD UNIV., STANFORD, CALIF. 94305
Source
APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 3; PP. 158-161; BIBL. 9 REF.
Document type
Article
Language
English
Keyword (fr)
GALLIUM COMPOSE ARSENIURE IMPLANTATION IMPURETE RECUIT REVETEMENT COUCHE MINCE CROISSANCE CRISTALLINE SILICIUM COMPOSE NITRURE OXYDE DEPOT CHIMIQUE CONDENSATION PLASMA ETUDE EXPERIMENTALE GALLIUM ARSENIURE SILICIUM NITRURE SILICIUM OXYDE COMPOSE MINERAL DOPAGE SE SUPPORT GAAS CRISTALLOGRAPHIE
Keyword (en)
GALLIUM COMPOUND ARSENIDES ANNEALING COATINGS THIN FILM CRYSTAL GROWTH SILICON COMPOUND NITRIDES OXIDES CHEMICAL DEPOSITION PLASMA CONDENSATION EXPERIMENTAL STUDY SILICON NITRIDE SILICA INORGANIC COMPOUND CRISTALLOGRAPHY
Keyword (es)
CRISTALOGRAFIA
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7840113323

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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