A NEW DEFECT-REVEALING ETCHANT FOR GAAS.
- Author
- GREENE LI
BELL. LAB., MURRAY HILL, N.J. 07974 - Source
- J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 9; PP. 3739-3741; BIBL. 7 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- GALLIUM COMPOSE ARSENIURE DEFAUT CRISTALLIN METHODE ETUDE PIQURE ATTAQUE ATTAQUE ELECTROLYTIQUE ETUDE EXPERIMENTALE GALLIUM ARSENIURE COMPOSE MINERAL CRISTALLOGRAPHIE
- Keyword (en)
- GALLIUM COMPOUND ARSENIDES CRYSTAL DEFECT DEFECTS INVESTIGATION METHOD ELECTROLYTIC ETCHING EXPERIMENTAL STUDY INORGANIC COMPOUND CRISTALLOGRAPHY
- Keyword (es)
- CRISTALOGRAFIA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7840180787
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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