INVESTIGATION OF GROWTH PROCESSES OF INGOTS OF SILICON CARBIDE SINGLE CRYSTALS.
- Author
- TAIROV YM; TSVETKOV UF
V.I. ULYANOV (LENIN) INST. ELECTR. ENG., LENINGRAD 197-022, USSR - Source
- J. CRYST. GROWTH.; NETHERL.; DA. 1978; VOL. 43; NO 2; PP. 209-212; BIBL. 13 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- SILICIUM COMPOSE CARBURE CROISSANCE CRISTALLINE MONOCRISTAL METHODE PHASE VAPEUR CONTROLE PROCESSUS ETUDE EXPERIMENTALE HAUTE TEMPERATURE SILICIUM CARBURE COMPOSE MINERAL CRISTALLOGRAPHIE
- Keyword (en)
- SILICON COMPOUND CARBIDES CRYSTAL GROWTH SINGLE CRYSTAL GROWTH FROM VAPOR EXPERIMENTAL STUDY HIGH TEMPERATURE SILICON CARBIDE INORGANIC COMPOUND CRISTALLOGRAPHY
- Keyword (es)
- CRISTALOGRAFIA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7840383156
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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