ELECTRICAL COMPENSATION IN SEMI-INSULATING GALLIUM ARSENIDE.
- Author
- BROZEL MR; BUTLER J; NEWMAN RC; RITSON A; STIRLAND DJ; WHITEHEAD C
J.J. THOMSON PHYS. LAB., WHITEKNIGHTS, READING RG6 2AF, UK - Source
- J. PHYS. C; GBR; DA. 1978; VOL. 11; NO 9; PP. 1857-1863; BIBL. 21 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- EFFET HALL DYNAMIQUE RETICULAIRE PORTEUR CHARGE CONCENTRATION PORTEUR CHARGE IMPURETE ARSENIURE GALLIUM IMPURETE CHROME IMPURETE SILICIUM PHYSIQUE SOLIDE
- Keyword (en)
- HALL EFFECT LATTICE DYNAMICS CHARGE CARRIER CHARGE CARRIER CONCENTRATION IMPURITIES SOLID PHYSICS
- Keyword (es)
- FISICA DEL ESTADO CONDENSADO
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7930027902
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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