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SMOOTH AND CONTINUOUS OHMIC CONTACTS TO GAAS USING EPITAXIAL GE FILMS.

Author
ANDERSON WT JR; CHRISTOU A; DAVEY JE
NAV. RES. LAB., WASHINGTON, D.C. 20375
Source
J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 5; PP. 2998-3000; BIBL. 13 REF.
Document type
Article
Language
English
Keyword (fr)
CONTACT ELECTRIQUE CONTACT OHMIQUE ARSENIURE COMPOSE GALLIUM PREPARATION COUCHE MINCE GERMANIUM COUCHE EPITAXIQUE ARSENIURE GALLIUM ELECTRONIQUE
Keyword (en)
ELECTRIC CONTACT OHMIC CONTACT ARSENIDES PREPARATION THIN FILM GERMANIUM EPITAXIAL FILM ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7930056324

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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