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LOCATION OF TRAPPED CHARGE IN ALUMINIUM-IMPLANTED SIO2.

Author
DIMARIA DJ; YOUNG DR; HUNTER WR; SERRANO CM
IBM THOMAS J. WATSON RES. CENT., YORKTOWN HEIGHTS, N.Y. 10598
Source
I.B.M. J. RES. DEVELOP.; USA; DA. 1978; VOL. 22; NO 3; PP. 289-293; BIBL. 19 REF.
Document type
Article
Language
English
Keyword (fr)
PIEGEAGE PORTEUR CHARGE PORTEUR CHARGE ELECTRON IMPURETE OXYDE SILICIUM IMPURETE ALUMINIUM PHYSIQUE SOLIDE
Keyword (en)
CHARGE CARRIER TRAPPING CHARGE CARRIER ELECTRONS IMPURITIES SOLID PHYSICS
Keyword (es)
FISICA DEL ESTADO CONDENSADO
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7930056372

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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