ROOM-TEMPERATURE OPERATION OF DISTRIBUTED-BRAGG-CONFINEMENT GA1-XALXAS-GAAS LASERS GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION
- Author
- DUPUIS RD; DAPKUS PD
ROCKWELL INTERNATIONAL, ANAHEIM CA 92803, USA - Source
- APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 1; PP. 68-69; BIBL. 14 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- LASER SEMICONDUCTEUR ARSENIURE COMPOSE GALLIUM COMPOSE ALUMINIUM DEPOT CHIMIQUE TEMPERATURE AMBIANTE CROISSANCE CRISTALLINE REFLEXION BRAGG REPARTIE OPTIQUE
- Keyword (en)
- SEMICONDUCTOR LASER ARSENIDES CHEMICAL DEPOSITION ROOM TEMPERATURE CRYSTAL GROWTH DISTRIBUTED BRAGG REFLECTION OPTICS
- Keyword (es)
- OPTICA
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics
- Discipline
- Theoretical physics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7930102847
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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