Pascal and Francis Bibliographic Databases

Help

Export

Selection :

Permanent link
http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=PASCAL7930132602

OHMIC CONTACTS PRODUCED BY LASER-ANNEALING TE-IMPLANTED GAAS

Author
BARNES PA; LEAMY HJ; POATE JM; FERRIS SD; WILLIAMS JS; CELLER GK
BELL LAB., MURRAY HILL NJ 07974, USA
Source
APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 11; PP. 965-967; BIBL. 10 REF.
Document type
Article
Language
English
Keyword (fr)
CONTACT ELECTRIQUE CONTACT OHMIQUE ARSENIURE COMPOSE GALLIUM RECUIT FAISCEAU LASER IMPLANTATION ION TELLURE FABRICATION ARSENIURE GALLIUM ELECTRONIQUE
Keyword (en)
ELECTRIC CONTACT OHMIC CONTACT ARSENIDES ANNEALING LASER BEAM ION IMPLANTATION TELLURIUM ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7930132602

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

Searching the Web