A NEW ETCHING SOLUTION SYSTEM, H3 PO4-H2O2-H2O, FOR GAAS AND ITS KINETICS
- Author
- MORI Y; WATANABE N
SONY CORP. RES. CENT., HODOGAYA-KU YOKOHAMA 240, JPN - Source
- J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 9; PP. 1510-1514; BIBL. 7 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- FABRICATION MICROELECTRONIQUE GRAVURE GRAVURE CHIMIQUE ARSENIURE COMPOSE GALLIUM MELANGE TRANSISTOR EFFET CHAMP TRANSISTOR EFFET CHAMP BARRIERE SCHOTTKY ARSENIURE GALLIUM ELECTRONIQUE
- Keyword (en)
- MICROELECTRONIC FABRICATION ARSENIDES FIELD EFFECT TRANSISTOR METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7930177948
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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