MEASUREMENT OF CARRIER LIFETIME PROFILES IN DIFFUSED LAYERS OF SEMICONDUCTORS
- Author
- BALIGA BJ; ADLER MS
GENERAL ELECTRIC COMP., SCHNECTADY NY, USA - Source
- I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 4; PP. 472-477; BIBL. 14 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- DISTRIBUTION DUREE VIE PORTEUR CHARGE COUCHE MINCE DIFFUSION IMPURETE REPONSE TRANSITOIRE PROGRAMME ORDINATEUR DOPAGE CONCENTRATION IMPURETE METHODE MESURE METHODE CAPACITIVE THYRISTOR CELLULE SOLAIRE TRANSISTOR HETERODIFFUSION SEMICONDUCTEUR ELECTRONIQUE
- Keyword (en)
- DISTRIBUTION LIFETIME CHARGE CARRIER THIN FILM TRANSIENT RESPONSE COMPUTER PROGRAMS DOPING IMPURITY DENSITY MEASUREMENT METHOD CAPACITIVE METHOD THYRISTOR SOLAR CELL TRANSISTOR IMPURITY DIFFUSION SEMICONDUCTOR MATERIALS ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7930215790
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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