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A NEW CONCEPT FOR HIGH-EFFICIENCY OPERATION OF HIGH-LOW-TYPE GAAS IMPATT DIODES

Author
HIRACHI Y; KOBAYASHI K; OGASAWARA K; TOYAMA Y
FUJITOU LABORATORIES LTD, KAWASAKI, JPN
Source
I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 666-674; BIBL. 19 REF.
Document type
Article
Language
English
Keyword (fr)
DIODE DIODE IMPATT ARSENIURE COMPOSE GALLIUM ANALYSE FONCTIONNEMENT STRUCTURE HIGH LOW ARSENIURE GALLIUM ELECTRONIQUE
Keyword (en)
DIODE IMPATT DIODE ARSENIDES OPERATION STUDY ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7930236734

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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