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DETERMINATION OF THE TEMPERATURE DEPENDENCE OF THE CAPTURE CROSS-SECTIONS OF THE GOLD ACCEPTOR LEVEL AND OF THE TEMPERATURE OF CURRENT FILAMENTS IN SILICON PIN DIODES

Author
DUDECK I; KASSING R
UNIV. MUNSTER INST. ANGEWANDTE PHYS., DEU
Source
PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 49; NO 1; PP. 153-161; ABS. GER; BIBL. 18 REF.
Document type
Article
Language
English
Keyword (fr)
DIODE DIODE COUCHE INTRINSEQUE TEMPERATURE SILICIUM FILAMENT COURANT ELECTRIQUE SECTION EFFICACE ANALYSE FONCTIONNEMENT ELECTRONIQUE
Keyword (en)
DIODE P I N DIODE TEMPERATURE SILICON FILAMENT ELECTRICAL CURRENTS CROSS SECTION OPERATION STUDY ELECTRONICS
Keyword (es)
ELECTRONICA
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
PASCAL7930238842

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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