THE PHYSICAL STRUCTURE OF THE INTERFACE BETWEEN SINGLECRYSTAL GAAS AND ITS OXIDE FILM
- Author
- NAVRATIL K; OHLIDAL I; LUKES F
PURKYNE UNIV. FAC. SCI., BRNO, CSK - Source
- THIN SOLID FILMS; NLD; DA. 1979; VOL. 56; NO 1-2; PP. 163-171; BIBL. 11 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- CONTACT ELECTRIQUE CONTACT OXYDE SEMICONDUCTEUR TEMPERATURE OXYDATION TEMPS ELLIPSOMETRIE REFLECTOMETRIE ARSENIURE GALLIUM ELECTRONIQUE
- Keyword (en)
- ELECTRIC CONTACT SEMICONDUCTOR OXIDE CONTACT TEMPERATURE OXIDATION TIME ELLIPSOMETRY REFLECTOMETRY ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7930333639
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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