THE ANODIC OXIDATION OF GAAS IN AN OXYGEN PLASMA GENERATED BY A D.C. ELECTRICAL DISCHARGE
- Author
- KOSHIGA F; SUGANO T
UNIV. TOKYO FAC. ENG., BUNKYO-KU TOKYO 113, JPN - Source
- THIN SOLID FILMS; NLD; DA. 1979; VOL. 56; NO 1-2; PP. 39-49; BIBL. 15 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- FABRICATION OXYDATION OXYDATION ANODIQUE ARSENIURE COMPOSE GALLIUM DECHARGE ELECTRIQUE OXYGENE COURANT CONTINU CONTACT ELECTRIQUE CONTACT OXYDE SEMICONDUCTEUR ETAT ELECTRONIQUE INTERFACE TRANSISTOR EFFET CHAMP TRANSISTOR EFFET CHAMP GRILLE ISOLEE DEPOT METHODE PHASE LIQUIDE METHODE EN SOLUTION ARSENIURE GALLIUM ELECTRONIQUE
- Keyword (en)
- OXIDATION ANODIZATION ARSENIDES ELECTRIC DISCHARGE OXYGEN DIRECT CURRENT ELECTRIC CONTACT SEMICONDUCTOR OXIDE CONTACT INTERFACE ELECTRON STATE FIELD EFFECT TRANSISTOR ISOLATED GATE FIELD EFFECT TRANSISTOR GROWTH FROM LIQUID GROWTH FROM SOLUTION ELECTRONICS
- Keyword (es)
- ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7930333645
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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